Titanium impurities in silicon, diamond, and silicon carbide

Titanium Impurities in Silicon, Diamond, and Silicon Carbide

Since transition metal impurities affect the electronic and optical properties of semiconductors [1], it is important to understand the role of such unavoidable impurities on those properties. At the same time, transition metals in semiconductors can be used in other unusual situations. The energy levels related to transition metal impurities are aligned with respect to each other for the same ...

Silicon Nitride and Silicon Carbide

High Performance Power Diodes on Silicon Carbide and Diamond

Silicon Carbide and diamond Schottky barrier diodes (SBD) with an original and high efficiency termination are presented. The influences of termination parameters on the diodes electrical performance are investigated for both punch-through (PT) and non punch-through (nPT) structures by simulations. Design guidelines, based on simple analytical expressions, for ideal SBDs are included. Electrica...

Single Point Diamond Turning of CVD coated Silicon Carbide

Scratching experiments, using diamond styli and single point diamond tools, were performed to simulate Single Point Diamond Turning (SPDT). The results of these experiments were used to determine if a ductile response is possible, and then to determine the critical depth of cut or penetration depth for the ductile to brittle transition (DBT). The depths of the scratches produced at different lo...

Silicon carbide microdisk resonator.

We demonstrate a silicon carbide (SiC) microdisk resonator with an intrinsic optical quality factor of 6.19×10(3), fabricated on the 3C-SiC-on-Si platform. We characterize the temperature dependence of the cavity resonance and obtain a thermo-optic coefficient of 2.92×10(-5)/K for 3C-SiC. Our simulations show that the device exhibits great potential for cavity optomechanical applications.